By Euzeli dos Santos, Edison R. da Silva
This booklet covers energy electronics, intensive, by means of featuring the fundamental rules and alertness information, which are used either as a textbook and reference book.
• Introduces a brand new solution to current strength electronics converters referred to as strength Blocks Geometry (PBG)
• Applicable for classes concentrating on energy electronics, energy electronics converters, and complex energy converters
• Offers a complete set of simulation effects to assist comprehend the circuits provided during the book
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Additional info for Advanced Power Electronics Converters: PWM Converters Processing AC Voltages
5, a square wave is generated at the inverter output. The output voltage is depicted in Fig. 22(b) along with the load current. 7) allows calculating the amplitude of the output fundamental voltage as well as the existing odd harmonics. The sinusoidal variation of the duty cycle d inside the switching interval Ts allows shifting the harmonics to the high frequency region. , sinusoidal signal). This technique is known as sinusoidal pulse-width modulation (SPWM). 23 Sinusoidal modulation: reference (top) and pole voltage waveform (bottom).
Its range of power operation is up to 50 kW. 2 kW can operate in the ultrahigh frequency range up to 450 MHz. However, the gate-source voltage required for turning this device off is about VGS = −30 V. 5 V. The SITH The SITH, or SIThy, a device unidirectional in voltage, is a combination of an n-channel SIT and a p–n–p transistor. Its symbol is given in Fig. 13(b). It is a normally-on device with turn-off controlled by negative gate voltages and it does not have reverse blocking capability. 5 kV∕300 A and has a rated frequency of 10 kHz but it is expected to be applied to power sources up to 10 MHz.
The MOSFET Application of the metal oxide semiconductor (MOS) technology to the field-effect transistor resulted in the power MOSFET. It has three terminals, the drain (D), the source (S), and the gate (G). Its symbol and I –V characteristics are shown in Fig. 9. It is an n–p–n, or p–n–p, device in which its two p–n, or n–p, layers are connected through a metal, so that a capacitor is formed between G and D. The MOSFET is turned on by a voltage pulse. The MOSFET acts as a resistance while conducting and behaves like a transistor before being turned on.
Advanced Power Electronics Converters: PWM Converters Processing AC Voltages by Euzeli dos Santos, Edison R. da Silva